Reconfigurable Si Nanowire Nonvolatile Transistors
- Authors
- Park, So Jeong; Jeon, Dae-Young; Piontek, Sabrina; Grube, Matthias; Ocker, Johannes; Sessi, Violetta; Heinzig, Andre; Trommer, Jens; Kim, Gyu-Tae; Mikolajick, Thomas; Weber, Walter M.
- Issue Date
- 1월-2018
- Publisher
- WILEY
- Keywords
- intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.4, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 4
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/78551
- DOI
- 10.1002/aelm.201700399
- ISSN
- 2199-160X
- Abstract
- Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
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- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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