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Reconfigurable Si Nanowire Nonvolatile Transistors

Authors
Park, So JeongJeon, Dae-YoungPiontek, SabrinaGrube, MatthiasOcker, JohannesSessi, ViolettaHeinzig, AndreTrommer, JensKim, Gyu-TaeMikolajick, ThomasWeber, Walter M.
Issue Date
1월-2018
Publisher
WILEY
Keywords
intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier
Citation
ADVANCED ELECTRONIC MATERIALS, v.4, no.1
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED ELECTRONIC MATERIALS
Volume
4
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/78551
DOI
10.1002/aelm.201700399
ISSN
2199-160X
Abstract
Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
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Kim, Gyu Tae
공과대학 (전기전자공학부)
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