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645-GHz InP heterojunction bipolar transistor harmonic oscillator
- Authors
- Yun, J.; Kim, J.; Yoon, D.; Rieh, J. -S.
- Issue Date
- 26-10월-2017
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- heterojunction bipolar transistors; harmonic oscillators; indium compounds; wide band gap semiconductors; III-V semiconductors; millimetre wave oscillators; heterojunction bipolar transistor harmonic oscillator; common-base cross-coupled topology; second harmonic signal; push-push operation; bias variation; terahertz imaging; signal source; frequency 561; 5 GHz to 645; 1 GHz; power 49; 3 mW; InP
- Citation
- ELECTRONICS LETTERS, v.53, no.22, pp.1475 - 1476
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 53
- Number
- 22
- Start Page
- 1475
- End Page
- 1476
- ISSN
- 0013-5194
- Abstract
- 645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push-push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is -17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.
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