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Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
- Authors
- Seo, Yujin; Lee, Tae In; Ahn, Hyun Jun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin
- Issue Date
- Oct-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Fermi-level pinning (FLP); germanium; Schottky barrier height (SBH); titanium oxide
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 64
- Number
- 10
- Start Page
- 4242
- End Page
- 4245
- ISSN
- 0018-9383
- Abstract
- A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.
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Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)