Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
- Authors
- Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin
- Issue Date
- Oct-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Aluminum oxynitride (AlON); border trap; germanium; germanium oxide (GeO); low-frequency noise (LFN)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 64
- Number
- 10
- Start Page
- 3998
- End Page
- 4001
- ISSN
- 0018-9383
- Abstract
- Aluminumoxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-trappingand low-frequency noise analyses.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)