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Surface Pinning Effect of an Antiferromagnetic Interlayer Exchange Coupling in (Ga1-xMnxAs/GaAs: Be)(10) Multilayer
- Authors
- Cho, Byeong-Gwan; Kim, Dong-Ok; Kim, Jae-Young; Chung, Jae-Ho; Lee, Sanghoon; Choi, Yongseong; Choi, Jun Woo; Lee, Dong Ryeol; Lee, Ki Bong
- Issue Date
- 7월-2017
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Dilute magnetic semiconductors; Magnetic multilayer; Interlayer exchange coupling; X-ray resonant magnetic reflectivity
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.71, no.2, pp.121 - 125
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 71
- Number
- 2
- Start Page
- 121
- End Page
- 125
- ISSN
- 0374-4884
- Abstract
- The depth-resolved magnetic configuration of a Ga0.97Mn0.03As/GaAs:Be multilayer with an antiferromagnetic interlayer exchange coupling was investigated using surface-sensitive soft x-ray resonant magnetic reflectivity (XRMR). We observed intriguing opposite increments in the XRMR intensities at the half-Bragg peak position between two different remanent states with opposite field sweep directions. A quantitative analysis shows that these opposite intensity increments result from two different anti-parallel spin configurations in such a way that the magnetization of top-most magnetic layer is pinned along the saturation magnetization direction before the remanent state. This surface pinning effect is important for understanding spin-dependent transport in semiconducting magnetic multilayers.
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