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Stacked resistive switches for AND/OR logic gates
- Issue Date
- 6월-2017
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Resistive switching; Memristive computing; Logic gate
- Citation
- SOLID-STATE ELECTRONICS, v.132, pp.45 - 48
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 132
- Start Page
- 45
- End Page
- 48
- ISSN
- 0038-1101
- Abstract
- This paper reports the use of stacked resistive switches as logic gates for implementing the "AND" and "OR" operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of "0" and "1", respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits. (C) 2017 Elsevier Ltd. All rights reserved.
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