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Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film
- Authors
- Ahn, Hyun Jun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin
- Issue Date
- 6월-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Atomic layer deposition (ALD); nickel germanide (NiGe); sheet resistance; specific contact resistivity; transfer length method (TLM)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 64
- Number
- 6
- Start Page
- 2599
- End Page
- 2603
- ISSN
- 0018-9383
- Abstract
- Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 mu Omega.cm) at 15 nm was obtained by N-2 + H-2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (rho(c)) values of 9.01 mu Omega.cm(2) for an NiGe/n(+)Ge contact and 3.61 mu Omega.cm(2) for an NiGe/p(+) Ge contact. These values were comparable to those obtained using sputteredNi. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 degrees C.
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