Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-Type Si FinFET
- Authors
- Ahn, Juhan; Kim, Jeong-Kyu; Kim, Jong-Kook; Kim, Jinok; Park, Jin-Hong; Yu, Hyun-Yong
- Issue Date
- 5월-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- FinFET; Specific Contact Resistivity; Tantalum Nitride; Titanium Nitride; Variation; Zinc Oxide
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3084 - 3088
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3084
- End Page
- 3088
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/83562
- DOI
- 10.1166/jnn.2017.14051
- ISSN
- 1533-4880
- Abstract
- In this work, a metal nitride interlayer semiconductor (MN-I-S) source/drain (S/D) model is suggested to investigate the effect of titanium nitride (TiN) and tantalum nitride (TaN) on the specific contact resistivity (rho(c)) of an MN-I-S S/D structure in a sub-14 nm n-type Si FinFET. The work function (WF) variation of TiN and TaN was considered based on a Rayleigh distribution. In this model, an undoped interlayer (undoped-IL) or heavily doped interlayer (n(+)-IL) were included to identify the effect of IL doping on rho(c). The structure with an n+-IL provides a very low variation in rho(c) as well as lower rho(c) values (i.e., similar to 4 x 10(-9) Omega.cm(2)). By using three-dimensional technology computer-aided design (TCAD) simulation, we also investigated the impact of rho(c) variation on device performance. The MN-I-S S/D with an n(+)-IL showed a higher on-state drive current with highly suppressed variation.
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