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Metal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 degrees C
- Issue Date
- May-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Oxide Semiconductor; Thin Film Transistors; SiInZnO; Metal Capping
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3397 - 3400
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3397
- End Page
- 3400
- ISSN
- 1533-4880
- Abstract
- We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 degrees C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (mu(FE)) showed 21.4 cm(2)/V s, and V-th shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)