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P-DRAMSim2: Exploiting thread-level parallelism in DRAMSim2

Authors
Han, MiseonKima, Seon WookKim, MinseongHan, Youngsun
Issue Date
25-4월-2017
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Keywords
memory system simulator; parallelization; DRAMSim2
Citation
IEICE ELECTRONICS EXPRESS, v.14, no.15
Indexed
SCIE
SCOPUS
Journal Title
IEICE ELECTRONICS EXPRESS
Volume
14
Number
15
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/83724
DOI
10.1587/elex.14.20170591
ISSN
1349-2543
Abstract
Recently, with the increasing popularity of data-centric applications, the demand for greater data storage capacities is also growing rapidly. Due to the increased memory footprints, memory system simulators are confronted with serious limitations in exploring memory system behaviors and performances, as the simulation takes enormous time compared to execution in real systems. Furthermore, since emerging memory technologies such as PCM and STT-RAM are designed to execute additional algorithms for enhancing wear-leveling, reducing bit flips, etc., the limitations become worse. To resolve these problems, we propose P-DRAMSim2 that accelerates the most popularly used DRAMSim2, a state-of-the-art memory simulator, by exploiting thread-level parallelism. From our experiment, we obtained up to 15.4x and 15.7x of speedups when simulating DRAM and PCM systems, respectively, with 16 command threads compared to serial execution without any loss of accuracy.
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