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Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses
- Authors
- Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- Apr-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- bending stress; channel width; a-Si:H TFT; bendable TFT
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 32
- Number
- 4
- ISSN
- 0268-1242
- Abstract
- In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 mu m, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 mu m-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 mu m-channel-width TFT fails to operate after a 2000 bending cycle.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)