D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18-mu m SiGe HBT Technology
- Authors
- Ko, Junho; Kim, Dongkyo; Jeon, Sanggeun
- Issue Date
- 3월-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- D-band amplifiers; gain boosting; interstage matching; positive feedback; SiGe heterojunction bipolar transistor (HBT)
- Citation
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.64, no.3, pp.254 - 258
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
- Volume
- 64
- Number
- 3
- Start Page
- 254
- End Page
- 258
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/84345
- DOI
- 10.1109/TCSII.2016.2561963
- ISSN
- 1549-7747
- Abstract
- This paper presents two D-band amplifiers fabricated in a 0.18-mu m SiGe heterojunction bipolar transistor process. A single-ended amplifier employs a five-stage common-base topology, and a differential amplifier combines two of the single-ended chains. To overcome the limited available gain of the given technology at D-band, a gain-boosting technique based on positive feedback is adopted for each gain cell. In addition, the input and output impedances of the gain cell are conjugate-matched by adjusting the positive feedback; thus, no external components are needed for interstage matching. This improves the gain and bandwidth whileminimizing the chip size. The single-ended amplifier exhibits a measured gain of 7.5 dB at 123 GHz with a 3-dB bandwidth of 25 GHz. The differential amplifier shows a measured gain of 20.3 dB at 115 GHz with a 3-dB bandwidth of 13 GHz. The output power values of the two amplifiers are 2.6 and 6.7 dBm, respectively. The chip sizes are small at 0.22 and 0.40 mm(2), respectively.
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