Steep switching characteristics of single-gated feedback field-effect transistors
- Authors
- Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 3-2월-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- feedback field-effect transistors; steep switching characteristics; subthreshold swing; positive feedback loop
- Citation
- NANOTECHNOLOGY, v.28, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 28
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/84471
- DOI
- 10.1088/1361-6528/28/5/055205
- ISSN
- 0957-4484
- Abstract
- In this study, we propose newly designed feedback field-effect transistors that utilize the. positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec(-1), an on/off current ratio of approximately 10(11), and an on-current of approximately 10(-4) A at room temperature, demonstrating that the switching characteristics are superior to those. of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
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