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A 280-GHz 10-dBm Signal Source Based on InP HBT Technology
- Authors
- Yun, Jongwon; Kim, Jungsoo; Rieh, Jae-Sung
- Issue Date
- 2월-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Heterojunction bipolar transistors; injection locked oscillators; power combining; submillimeter wave integrated circuits.
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.2, pp.159 - 161
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 27
- Number
- 2
- Start Page
- 159
- End Page
- 161
- ISSN
- 1531-1309
- Abstract
- A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).
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