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Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers
- Authors
- Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun
- Issue Date
- 11-Jan-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- resistive switching; memristor; zince oxide; oxygen reservoir
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 50
- Number
- 1
- ISSN
- 0022-3727
- Abstract
- In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (similar to 10(5)) at a read voltage of 0.4 V, and highly stable low-and high-resistive state operation for 100 direct-current sweep cycles.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)