The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction
- Authors
- Kim, Sun-Woo; Kirn, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong
- Issue Date
- 28-12월-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- gallium arsenide; interfacial dipole; Schottky barrier; specific contact resistivity; Fermi level pinning
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.51, pp.35614 - 35620
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 51
- Start Page
- 35614
- End Page
- 35620
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86497
- DOI
- 10.1021/acsami.6b10376
- ISSN
- 1944-8244
- Abstract
- We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using the interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to a sufficient degree to alleviate Fermi level pinning caused by MIGS, resulting in contact resistance reduction. In addition, the ZnO/TiO2 interlayers of an M-I-S structure induce an interfacial dipole effect that produces Schottky barrier height (Phi(B)) reduction, which reduces the specific contact resistivity (rho(c)) of the metal/n-type III-V semiconductor contact. As a result, the Ti/ZnO(0.5 nm)/TiO2(0.5 nm)/n-GaAs metal-double interlayers-semiconductor (M-DI-S) structure achieved a rho(c) of 2.51 x 10(-5) Omega.cm(2), which exhibited an similar to 42 000x reduction and an similar to 40X reduction compared to the Ti/n-GaAs metal-semiconductor (M-S) contact and the Ti/TiO2(0.5 nm)/n-GaAs M-I-S structure, respectively. The interfacial dipole at the ZnO/TiO2 interface was determined to be approximately -0.104 eV, which induced a decrease in the effective work function of Ti and, therefore, reduced Phi(B). X-ray photoelectron spectroscopy analysis of the M-DI-S structure also confirmed the existence of the interfacial dipole. On the basis of these results, the M-DI-S structure offers a promising nonalloyed Ohmic contact scheme for the development of III-V semiconductor-based applications.
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