Fatigue Behaviors of Silicon Nanowire Field-Effect Transistors on Bendable Substrate
- Authors
- Kim, Yoonjoong; Jeon, Youngin; Lim, Doohyeok; Kim, Sangsig
- Issue Date
- Dec-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon-Nanowire; Field-Effect Transistor; Ecoflex Substrate; Island Structure
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.12, pp.12823 - 12826
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 12
- Start Page
- 12823
- End Page
- 12826
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86672
- DOI
- 10.1166/jnn.2016.13671
- ISSN
- 1533-4880
- Abstract
- In this study, we fabricated an island-structured silicon nanowire (SiNW) field-effect transistor (FET) on an Ecoflex substrate and analyzed the device reliability against the bending fatigue. A SiNW-FET was fabricated on a plastic substrate and this FET on the plastic substrate was transferred onto the Ecoflex substrate. Compared to a SiNW-FET on a plastic substrate, the SiNW-FET with the island plastic structure on the Ecoflex substrate showed the stable electrical characteristics under various bending strain. Variations less than 10% of the threshold voltage and transconductance were observed under the bending strain of 15%. Moreover, the electrical characteristics were maintained even after 2000 bending cycles.
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