Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment
- Authors
- Kim, Seung-Hwan; Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Jeong-Kyu; Choi, Changhwan; Park, Jin-Hong; Choi, Rino; Yu, Hyun-Yong
- Issue Date
- 4월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Contact resistance; Fermi-level unpinning; gallium arsenide; SF6 plasma; passivation
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.37, no.4, pp.373 - 376
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 37
- Number
- 4
- Start Page
- 373
- End Page
- 376
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89086
- DOI
- 10.1109/LED.2016.2524470
- ISSN
- 0741-3106
- Abstract
- We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-semiconductor (MIS) structure to reduce source/drain (S/D) contact resistance. The interface trap states and the metal-induced gap states causing the Fermi-level pinning problem are effectively alleviated by passivating the GaAs surface with SF6 plasma treatment and inserting a thin ZnO interlayer, respectively. Specific contact resistivity exhibits similar to 10(4) x reduction when the GaAs surface is treated with SF6 plasma, followed by ZnO interlayer deposition, compared with the Ti/n-GaAs (similar to 2x10(18) cm(-3)) S/D contact. This result proposes the promising non-alloyed S/D ohmic contact for III-V semiconductor-based transistors.
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