A D-Band Integrated Signal Source Based on SiGe 0.18 mu m BiCMOS Technology
- Authors
- Jung, Seungyoon; Yun, Jongwon; Rieh, Jae-Sung
- Issue Date
- Oct-2015
- Publisher
- KOREAN INST ELECTROMAGNETIC ENGINEERING & SCIENCE
- Keywords
- Amplifier; D-Band; Frequency Doubler; Oscillator; Signal Source
- Citation
- JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, v.15, no.4, pp.232 - 238
- Indexed
- KCI
- Journal Title
- JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE
- Volume
- 15
- Number
- 4
- Start Page
- 232
- End Page
- 238
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92329
- DOI
- 10.5515/JKIEES.2015.15.4.232
- ISSN
- 2234-8409
- Abstract
- This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is 900 x 1,890 mu m(2), including RF and DC pads.
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