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Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes
- Issue Date
- 10월-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Deep-UV; Transparent Conducting Electrode; Ga2O3; ITO; Bi-Layer
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.7777 - 7780
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 15
- Number
- 10
- Start Page
- 7777
- End Page
- 7780
- ISSN
- 1533-4880
- Abstract
- The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples an as-deposited sample and two samples post-annealed in N-2 gas and N-2-H-2 gas mixture were prepared and annealed at different temperatures ranging from 100 degrees C to 500 degrees C for comparison. Among these samples, the sample annealed at 300 degrees C in a mixture of N-2 and H-2 gases shows the lowest sheet resistance of 301.3 Omega/square and a high UV transmittance of 87.1% at 300 nm.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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