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Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes
- Authors
- Park, Tae Hoon; Kim, Tae Geun
- Issue Date
- 9월-2015
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.120, no.3, pp.841 - 846
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 120
- Number
- 3
- Start Page
- 841
- End Page
- 846
- ISSN
- 0947-8396
- Abstract
- In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an last quantum barrier and an electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.
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