Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment
- Authors
- Kim, HoSung; Park, MinSu; Kim, SangHyeon; Kim, SangHyuck; Song, JinDong; Choi, WonJun; Park, JungHo; Lee, YooJong
- Issue Date
- 7월-2015
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 33
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93186
- DOI
- 10.1116/1.4926630
- ISSN
- 1071-1023
- Abstract
- The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively. (C) 2015 American Vacuum Society.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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