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Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment

Authors
Kim, HoSungPark, MinSuKim, SangHyeonKim, SangHyuckSong, JinDongChoi, WonJunPark, JungHoLee, YooJong
Issue Date
7월-2015
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume
33
Number
4
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93186
DOI
10.1116/1.4926630
ISSN
1071-1023
Abstract
The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively. (C) 2015 American Vacuum Society.
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