A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-mu m InP HBT Technology
- Authors
- Yoon, Daekeun; Yun, Jongwon; Rieh, Jae-Sung
- Issue Date
- 7월-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Frequency control; heterjunction bipolar transistor (HBT); voltage-controlled oscillators (VCOs)
- Citation
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.4, pp.652 - 654
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
- Volume
- 5
- Number
- 4
- Start Page
- 652
- End Page
- 654
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93196
- DOI
- 10.1109/TTHZ.2015.2443432
- ISSN
- 2156-342X
- Abstract
- A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-mu m InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was -6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was -86.55 at 10-MHz offset. The circuit occupies only 0.014 mm(2) excluding the probing pads.
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