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Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices
- Authors
- Kwon, Jeong Yong; Park, Ju Hyun; Kim, Tae Geun
- Issue Date
- 1-Jun-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.106, no.22
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 106
- Number
- 22
- ISSN
- 0003-6951
- Abstract
- We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200 nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10(2), respectively. In addition, the device showed an endurance of 10(3) dc cycles and a retention time over 10(5) s. (c) 2015 AIP Publishing LLC.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)