A D-band Active Imager in a SiGe HBT Technology
- Authors
- Yoon, Daekeun; Song, Kiryong; Kim, Jungsoo; Kaynak, Mehmet; Tillack, Bernd; Rieh, Jae-Sung
- Issue Date
- 4월-2015
- Publisher
- SPRINGER
- Keywords
- heterodyne bipolar transistors; bipolar integrated circuit; imaging
- Citation
- JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, v.36, no.4, pp.335 - 349
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES
- Volume
- 36
- Number
- 4
- Start Page
- 335
- End Page
- 349
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94011
- DOI
- 10.1007/s10762-014-0137-1
- ISSN
- 1866-6892
- Abstract
- In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-mu m SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz(1/2). For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz(1/2) were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 x 600 mu m(2) including the antenna and bonding pads, images of various objects were successfully acquired.
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