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A comparative study of CF4/O-2/Ar and C4F8/O-2/Ar plasmas for dry etching applications
- Issue Date
- 31-Mar-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Tetrafluoromethane; Perfluorocyclobutane; Plasma diagnostics; Modeling; Reaction kinetics; Plasma modeling
- Citation
- THIN SOLID FILMS, v.579, pp.136 - 143
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 579
- Start Page
- 136
- End Page
- 143
- ISSN
- 0040-6090
- Abstract
- The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved.
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Related Researcher
- Kwon, Kwang Ho
- Department of Control and Instrumentation Engineering