Etching characteristics and mechanisms of Mo thin films in Cl-2/Ar and CF4/Ar inductively coupled plasmas
- Authors
- Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Choi, Bok-Gil; Kwon, Kwang-Ho
- Issue Date
- 11월-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 53
- Number
- 11
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/96912
- DOI
- 10.7567/JJAP.53.116201
- ISSN
- 0021-4922
- Abstract
- The etching characteristics and mechanism of Mo thin films in Cl-2/Ar and CF4/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; input power, 700W; bias power, 200W) were investigated. For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monotonic change in the Mo etching rates. The X-ray photoelectron spectroscopy (XPS) diagnostics indicated contamination of the etched surfaces by reaction products. The Cl-2/Ar and CF4/Ar plasma parameters were also investigated using a combination of a zero-dimensional plasma model and plasma diagnostics using Langmuir probes. An analysis of the etching kinetics with the model-predicted fluxes of the plasma active species suggests that: 1) the Mo etching process occurs in the transitional regime of the ion-assisted chemical reaction, and 2) the non-monotonic Mo etching rate is probably associated with opposing changes in the fluxes; of the reactive neutral species and ion energy. (C) 2014 The Japan Society of Applied Physics
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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