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Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes
- Issue Date
- Nov-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- co-sputtering; Ga2O3; hydrogen annealing; IGTO; transparent conductive oxides
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.11, pp.2569 - 2573
- Indexed
- SCIE
SCOPUS
- Volume
- 211
- Number
- 11
- Start Page
- 2569
- End Page
- 2573
- ISSN
- 1862-6300
- Abstract
- We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga2O3) and indium tin oxide (ITO). The electrical and optical properties of Ga2O3/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164/ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9x10(-1)cm(2).
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)