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Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition
- Authors
- Chung, Ho Young; Kim, Su Jin; Kim, Tae Geun
- Issue Date
- Nov-2014
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Electron blocking layer; Light-emitting diodes; Efficiency droop; Numerical simulation
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.75, pp.390 - 397
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 75
- Start Page
- 390
- End Page
- 397
- ISSN
- 0749-6036
- Abstract
- In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of similar to 2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices. (C) 2014 Elsevier Ltd. All rights reserved.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)