Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates
- Authors
- Jeon, Youngin; Kim, Sangsig
- Issue Date
- Aug-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- field-effect transistors; multilayers; nanowires; plastics; substrates; ZnO
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1928 - 1932
- Indexed
- SCIE
SCOPUS
- Volume
- 211
- Number
- 8
- Start Page
- 1928
- End Page
- 1932
- ISSN
- 1862-6300
- Abstract
- In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)