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Germanium p-i-n avalanche photodetector fabricated by point defect healing process
- Authors
- Shim, Jaewoo; Kang, Dong-Ho; Yoo, Gwangwe; Hong, Seong-Taek; Jung, Woo-Shik; Kuh, Bong Jin; Lee, Beomsuk; Shin, Dongjae; Ha, Kyoungho; Kim, Gwang Sik; Yu, Hyun-Yong; Baek, Jungwoo; Park, Jin-Hong
- Issue Date
- 15-7월-2014
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS LETTERS, v.39, no.14, pp.4204 - 4207
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS LETTERS
- Volume
- 39
- Number
- 14
- Start Page
- 4204
- End Page
- 4207
- ISSN
- 0146-9592
- Abstract
- In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 mu A below V-R = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600 degrees C and 650 degrees C) and optimizing the doping concentration of the intrinsic region (p-type similar to 10(17) cm(-3)). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. (C) 2014 Optical Society of America
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