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Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process
- Issue Date
- 3월-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- resistive switching; ReRAM; silicon nitride; charge trapping; silicon; dangling bonds
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, no.3, pp.239 - 242
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 8
- Number
- 3
- Start Page
- 239
- End Page
- 242
- ISSN
- 1862-6254
- Abstract
- The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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