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300 GHz InP HBT amplifier with 10 mW output power
- Authors
- Yu, H. G.; Choi, S. H.; Jeon, S.; Kim, M.
- Issue Date
- 27-Feb-2014
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.50, no.5, pp.377 - 378
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 50
- Number
- 5
- Start Page
- 377
- End Page
- 378
- ISSN
- 0013-5194
- Abstract
- A high-power terahertz solid-state amplifier fabricated using 0.25 mu m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 mu m. A significant amount of power of similar to 10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.
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Related Researcher
- Kim, Moon il
- College of Engineering (School of Electrical Engineering)