IEEE Transactions on Components and Packaging Technologies

ISSN
P 1521-3331
출판사
Institute of Electrical and Electronics Engineers
국가
USA
발행 상태
활성

데이터베이스 수록 정보

JCR 1999-2010 (12년)
SCI 2010-2011 (2년)
SCIE 2010-2011 (2년)
Scopus 1999-2010 (12년)
SJR 2000-2013 (14년)

전체 53건 중 1번부터 10번까지의 결과를 표시합니다.

2022
Article

Impact of Various Pulse-Bases on Charge Boost in Ferroelectric Capacitors

  • Kim, Gwon
  • Lim, Jaehyuk
  • Eom, Deokjoon
  • Choi, Yejoo
  • Kim, Hyoungsub
  • ... Shin, Changhwan
  • 2022-11
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2021
Article

Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics

  • 2021-05
  • IEEE Electron Device Letters
  • Institute of Electrical and Electronics Engineers Inc.
2020
Article

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

  • Jung, Seung-Geun
  • Lee, Sul-Hwan
  • Kim, Choong-Ki
  • Yoo, Min-Soo
  • Yu, Hyun-Yong
  • 2020-06
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
Article

Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs

  • Lim, Hyeong-Rak
  • Kim, Seong Kwang
  • Han, Jae-Hoon
  • Kim, Hansung
  • Geum, Dae-Myeong
  • ... Ju, Byeong-Kwon
  • 외 3명
  • 2019-09
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2018
Article

Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

  • Kim, Seung-Geun
  • Kim, Gwang-Sik
  • Kim, Seung-Hwan
  • Yu, Hyun-Yong
  • 2018-12
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

A Simple Method for Estimation of Silicon Film Thickness in T-Gate Junction less Transistors

  • Jeon, Dae-Young
  • Park, So Jeong
  • Mouis, Mireille
  • Barraud, Sylvain
  • Kim, Gyu-Tae
  • 외 1명
  • 2018-09
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

  • Lee, Sojeong
  • Lee, Won-Yong
  • Jang, Bongho
  • Kim, Taegyun
  • Bae, Jin-Hyuk
  • ... Kim, Sangsig
  • 외 2명
  • 2018-01
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2017
Article

Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor

  • Park, June
  • Kang, Dong-Ho
  • Kim, Jong-Kook
  • Park, Jin-Hong
  • Yu, Hyun-Yong
  • 2017-08
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

  • Oh, Seungyeol
  • Kim, Taeho
  • Kwak, Myunghoon
  • Song, Jeonghwan
  • Woo, Jiyong
  • 외 3명
  • 2017-06
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

  • 2017-04
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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