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자료 필터
자료유형
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2012 ~ 2026
2012 2026
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선택된 필터
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전체 109건 중 51번부터 60번까지의 결과를 표시합니다.
2019
Article
Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits
- Park, Jae-Hyeun ;
- Kim, Seung-Hwan ;
- Kim, Seung-Geun ;
- Heo, Keun ;
- Yu, Hyun-Yong
- 2019-03-06
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure
- Kim, Seung-Hwan ;
- Han, Kyu Hyun ;
- Kim, Gwang-Sik ;
- Kim, Seung-Geun ;
- Kim, Jiyoung ;
- ... Yu, Hyun-Yong
- 2019-02-13
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors
- Kim, Gwang-Sik ;
- Lee, Tae In ;
- Cho, Byung Jin ;
- Yu, Hyun-Yong
- 2019-01-07
- Applied Physics Letters
- AMER INST PHYSICS
Article
Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal-Interlayer-Semiconductor Source/Drain Contact Structure
- Jung, Seung-Geun ;
- Yu, Hyun-Yong
- 2019
- IEEE Journal of the Electron Devices Society
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2018
Article
Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain
- Kim, Seung-Geun ;
- Kim, Gwang-Sik ;
- Kim, Seung-Hwan ;
- Yu, Hyun-Yong
- 2018-12
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Universal Metal-Interlayer-Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation
- Kim, Jeong-Kyu ;
- Kim, Seung-Hwan ;
- Kim, Taikyu ;
- Yu, Hyun-Yong
- 2018-11
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Effective Schottky barrier height lowering technique for InGaAs contact scheme: D-MIGS and D-it reduction and interfacial dipole formation
- Kim, Seung-Hwan ;
- Kim, Gwang-Sik ;
- Kim, Sun-Woo ;
- Yu, Hyun-Yong
- 2018-09-30
- Applied Surface Science
- ELSEVIER
Article
Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device
- Shin, Jaemin ;
- Ko, Eunah ;
- Park, June ;
- Kim, Seung-Geun ;
- Lee, Jae Woo ;
- ... Yu, Hyun-Yong ;
- 외 1명
- 2018-09-03
- Applied Physics Letters
- AMER INST PHYSICS
Article
Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement
- Kim, Seung-Hwan ;
- Kim, Gwang-Sik ;
- Park, June ;
- Lee, Changmin ;
- Kim, Hyoungsub ;
- ... Sim, Joon Hyung ;
- ... Yu, Hyun-Yong ;
- 외 1명
- 2018-08-08
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Effects of Metal-Interlayer-Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs
- Jung, Seung-Geun ;
- Kim, Seung-Hwan ;
- Kim, Gwang-Sik ;
- Yu, Hyun-Yong
- 2018-08
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC