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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
- Authors
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- Issue Date
- Nov-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Junctionless transistors (JLTs); Extraction method; Bulk channel mobility; Flat-band voltage; 2D numerical simulation; Maserjian' s-like function for g(m)
- Citation
- SOLID-STATE ELECTRONICS, v.89, pp.139 - 141
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 89
- Start Page
- 139
- End Page
- 141
- ISSN
- 0038-1101
- Abstract
- A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.
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Related Researcher
- Kim, Gyu Tae
- College of Engineering (School of Electrical Engineering)