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Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation
- Authors
- Hong, Sung-Min; Oh, Yongho; Kim, Namhyung; Rieh, Jae-Sung
- Issue Date
- 1월-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Oscillator; Phase noise; Semiconductor device modeling; Semiconductor device noise
- Citation
- SOLID-STATE ELECTRONICS, v.79, pp.152 - 158
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 79
- Start Page
- 152
- End Page
- 158
- ISSN
- 0038-1101
- Abstract
- A mixed-mode technology computer-aided design framework, which can evaluate the periodic steady-state solution of the oscillator efficiently, has been applied to an RFCMOS LC oscillator. Physics-based simulation of active devices makes it possible to link the internal parameters inside the devices and the performance of the oscillator directly. The phase noise of the oscillator is simulated with physics-based device simulation and the results are compared with the experimental data. Moreover, the statistical effect of the random dopant fluctuation on the oscillation frequency is investigated. (C) 2012 Elsevier Ltd. All rights reserved.
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