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Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl-2/Ar plasma

Authors
Lee, TaehoonEfremov, AlexanderHam, Yong-HyunYun, Sun JinMin, Nam-KiHong, MunPyoKwon, Kwang-Ho
Issue Date
Apr-2009
Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
Keywords
VO2; Cl-2/Ar plasma; etch rate; etch mechanism
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.8, no.2
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS
Volume
8
Number
2
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120304
DOI
10.1117/1.3100423
ISSN
1932-5150
Abstract
An investigation of a VO2 etch mechanism in Cl-2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO2 etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl3 and/or VCl2 in the reaction products. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3100423]
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College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
Graduate School > Department of Applied Physics > 1. Journal Articles
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