Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl-2/Ar plasma
- Authors
- Lee, Taehoon; Efremov, Alexander; Ham, Yong-Hyun; Yun, Sun Jin; Min, Nam-Ki; Hong, MunPyo; Kwon, Kwang-Ho
- Issue Date
- Apr-2009
- Publisher
- SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
- Keywords
- VO2; Cl-2/Ar plasma; etch rate; etch mechanism
- Citation
- JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.8, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS
- Volume
- 8
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120304
- DOI
- 10.1117/1.3100423
- ISSN
- 1932-5150
- Abstract
- An investigation of a VO2 etch mechanism in Cl-2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO2 etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl3 and/or VCl2 in the reaction products. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3100423]
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Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Applied Physics > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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