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Series resistance in different operation regime of junctionless transistors
- Authors
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- Issue Date
- Mar-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Junctionless transistors (JLTs); Series resistance (R-sd); Bulk channel; Accumulation channel; Numerical simulation and temperature dependence
- Citation
- SOLID-STATE ELECTRONICS, v.141, pp.92 - 95
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 141
- Start Page
- 92
- End Page
- 95
- ISSN
- 0038-1101
- Abstract
- Operation mode dependent series resistance (R-sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R-sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R-sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R-sd. This work provides key information for a better understanding of JLT operation affected by R-sd effects with different state of conduction channel.
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Related Researcher
- Kim, Gyu Tae
- College of Engineering (School of Electrical Engineering)