김태근 프로필 사진

김태근

Kim, Tae geun

공과대학

전기전자공학부

자료 필터

자료유형

발행연도

2008 ~ 2026
2008 2026

키워드

언어

선택된 필터

  • article
  • conference
  • book

전체 450건 중 201번부터 210번까지의 결과를 표시합니다.

2012
Article

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

  • Kim, Hee-Dong ; 
  • An, Ho-Myoung ; 
  • Hong, Seok Man ; 
  • Kim, Tae Geun
  • 2012-12
  • Semiconductor Science and Technology
  • IOP PUBLISHING LTD
Article

Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

  • Kim, Dae Hwan ; 
  • Park, Sungwook ; 
  • Seo, Yujeong ; 
  • Kim, Tae Geun ; 
  • Kim, Dong Myong ; 
  • 외 1명
  • 2012-12
  • JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
  • IEEK PUBLICATION CENTER
Article

Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices

  • Seo, Yujeong ; 
  • Song, Min Yeong ; 
  • An, Ho-Myoung ; 
  • Kim, Yeon Soo ; 
  • Park, Bae Ho ; 
  • ... Kim, Tae Geun
  • 2012-10-01
  • Journal of Applied Physics
  • AMER INST PHYSICS
Article

Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

  • 2012-10
  • Microelectronic Engineering
  • ELSEVIER SCIENCE BV
Article

Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices

  • 2012-10
  • Microelectronic Engineering
  • ELSEVIER
Article

Fluorescent cholesterol sensing using enzyme-modified CdSe/ZnS quantum dots

  • 2012-10
  • Journal of Nanoparticle Research
  • SPRINGER
Article

Structural and electrical properties of high-quality 0.41 mu m-thick InSb films grown on GaAs (100) substrate with InxAl1-xSb continuously graded buffer

  • Shin, Sang Hoon ; 
  • Song, Jin Dong ; 
  • Lim, Ju Young ; 
  • Koo, Hyun Cheol ; 
  • Kim, Tae Geun
  • 2012-10
  • Materials Research Bulletin
  • PERGAMON-ELSEVIER SCIENCE LTD
Article

Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers

  • 2012-10
  • Microelectronic Engineering
  • ELSEVIER
Article

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

  • 2012-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO3 Film

  • Song, Min Yeong ; 
  • Seo, Yujeong ; 
  • Kim, Yeon Soo ; 
  • Kim, Hee Dong ; 
  • An, Ho-Myoung ; 
  • ... Sung, Yun Mo ; 
  • ... Kim, Tae Geun ; 
  • 외 1명
  • 2012-09
  • Applied Physics Express
  • JAPAN SOC APPLIED PHYSICS