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Showing results 1 to 19 of 19

SCISCIESCOPUS
A SPICE model of silicon tunneling field-effect transistors

Woo, Sola; Kim, Minsuk; Kim, Sangsig

ArticleIssue Date2018CitationMICROELECTRONIC ENGINEERING, v.191, pp 66 - 71PublisherELSEVIER SCIENCE BV
SCIESCOPUS
ASPICEmodel of p-channel silicon tunneling field-effect transistors for logic applications

Woo, Sola; Jeon, Juhee; Kim, Sangsig

ArticleIssue Date2021CitationINTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, v.34, no.1PublisherWILEY
SCISCIESCOPUS
Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Woo, Sola; Kim, Minsuk; Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2018CitationSUPERLATTICES AND MICROSTRUCTURES, v.120, pp 60 - 66PublisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Covered Source-Channel Tunnel Field-Effect Transistors With Trench Gate Structures

Woo, Sola; Kim, Sangsig

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp 114 - 118PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Woo, Sola; Kim, Sangsig

ArticleIssue Date2022CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.37, no.8PublisherIOP Publishing Ltd
SCIESCOPUSKCI
Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

Woo, Sola; Kim, Sangsig

ArticleIssue Date2020CitationCURRENT APPLIED PHYSICS, v.20, no.10, pp 1156 - 1162PublisherELSEVIER
SCIESCOPUS
Edge Termination for Optimized Silicon Carbide MOSFET Breakdown Voltage

Woo, Sola; Geum, Jongmin; Kyoung, Sinsu; Sung, Man Yung

ArticleIssue Date2016CitationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.11, no.5, pp 585 - 588PublisherAMER SCIENTIFIC PUBLISHERS
SCISCIESCOPUS
Impact ionization and tunneling operations in charge-plasma dopingless device

Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Im, Kyeungmin; Cho, Jinsun; Kang, Hyungu; Kim, Sangsig

ArticleIssue Date2017CitationSUPERLATTICES AND MICROSTRUCTURES, v.111, pp 796 - 805PublisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
SCIESCOPUS
Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Woo, Sola; Cho, Jinsun; Lim, Doohyeok; Park, Young-Soo; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.7, pp 2995 - 3000PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Integrate-and-Fire Neuron Circuit Without External Bias Voltages

Park, Young-Soo; Woo, Sola; Lim, Doohyeok; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2021CitationFRONTIERS IN NEUROSCIENCE, v.15PublisherFRONTIERS MEDIA SA
SCIESCOPUS
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistorsopen access

Jeon, Juhee; Woo, Sola; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2022CitationSCIENTIFIC REPORTS, v.12, no.1PublisherNATURE PORTFOLIO
SCIESCOPUS
Neural oscillation of single silicon nanowire neuron device with no external bias voltageopen access

Woo, Sola; Kim, Sangsig

ArticleIssue Date2022CitationSCIENTIFIC REPORTS, v.12, no.1PublisherNATURE PORTFOLIO
SCISCIESCOPUS
Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer

Kang, Hyungu; Cho, Jinsun; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.8, pp 3342 - 3348PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUSKCI
Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

Kim, Sutae; Kim, Minsuk; Woo, Sola; Kang, Hyungu; Kim, Sangsig

ArticleIssue Date2018CitationCURRENT APPLIED PHYSICS, v.18, no.3, pp 340 - 344PublisherELSEVIER SCIENCE BV
SCIESCOPUS
Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learningopen access

Woo, Sola; Jeon, Juhee; Kim, Sangsig

ArticleIssue Date2023CitationMICROMACHINES, v.14, no.3PublisherMDPI
SCISCIESCOPUS
Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors

Cho, Jinsun; Lim, Doohyeok; Woo, Sola; Cho, Kyungah; Kim, Sangsig

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp 413 - 419PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Steep switching characteristics of single-gated feedback field-effect transistors

Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2017CitationNANOTECHNOLOGY, v.28, no.5PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

Park, Jae Hyun; Chang, Tae-sig; Kim, Minsuk; Woo, Sola; Kim, Sangsig

ArticleIssue Date2018CitationSUPERLATTICES AND MICROSTRUCTURES, v.113, pp 169 - 177PublisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

Woo, Sola; Cho, Jinsun; Lim, Doohyeok; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.11, pp 4753 - 4758PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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