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SCIESCOPUS
Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

Kim, Seung-Hwan; Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Jeong-Kyu; Choi, Changhwan; Park, Jin-Hong; Choi, Rino; Yu, Hyun-Yong

ArticleIssue Date2016CitationIEEE ELECTRON DEVICE LETTERS, v.37, no.4, pp.373 - 376PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyun Jun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Theoretical and Experimental Investigation of Graphene/High-kappa/p-Si Junctions

Shim, Jaewoo; Yoo, Gwangwe; Kang, Dong-Ho; Jung, Woo-Shik; Byun, Young-Chul; Kim, Hyoungsub; Kang, Won Tae; Yu, Woo Jong; Yu, Hyun-Yong; Park, Yongkook, et al.

ArticleIssue Date2016CitationIEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.4 - 7PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-Type Si FinFET

Ahn, Juhan; Kim, Jeong-Kyu; Kim, Jong-Kook; Kim, Jinok; Park, Jin-Hong; Yu, Hyun-Yong

ArticleIssue Date2017CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3084 - 3088PublisherAMER SCIENTIFIC PUBLISHERS
SCIESCOPUS
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Park, Hyung-Youl; Jung, Woo-Shik; Kang, Dong-Ho; Jeon, Jaeho; Yoo, Gwangwe; Park, Yongkook; Lee, Jinhee; Jang, Yun Hee; Lee, Jaeho; Park, Seongjun, et al.

ArticleIssue Date2016CitationADVANCED MATERIALS, v.28, no.5, pp.864 - 870PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device

Shin, Jaemin; Ko, Eunah; Park, June; Kim, Seung-Geun; Lee, Jae Woo; Yu, Hyun-Yong; Shin, Changhwan

ArticleIssue Date2018CitationAPPLIED PHYSICS LETTERS, v.113, no.10PublisherAMER INST PHYSICS
SCIESCOPUS
A Hybrid RF MEMS Switch Actuated by the Combination of Bidirectional Thermal Actuations and Electrostatic Holding

Chae, Uikyu; Yu, Hyun-Yong; Lee, Changhyuk; Cho, Il-Joo

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.68, no.8, pp.3461 - 3470PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Effective Schottky barrier height lowering technique for InGaAs contact scheme: D-MIGS and D-it reduction and interfacial dipole formation

Kim, Seung-Hwan; Kim, Gwang-Sik; Kim, Sun-Woo; Yu, Hyun-Yong

ArticleIssue Date2018CitationAPPLIED SURFACE SCIENCE, v.453, pp.48 - 55PublisherELSEVIER
SCIESCOPUS
Effects of Metal-Interlayer-Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs

Jung, Seung-Geun; Kim, Seung-Hwan; Kim, Gwang-Sik; Yu, Hyun-Yong

ArticleIssue Date2018CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp.3136 - 3141PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure

Kim, Seung-Hwan; Han, Kyu Hyun; Kim, Gwang-Sik; Kim, Seung-Geun; Kim, Jiyoung; Yu, Hyun-Yong

ArticleIssue Date2019CitationACS APPLIED MATERIALS & INTERFACES, v.11, no.6, pp.6230 - 6237PublisherAMER CHEMICAL SOC
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